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Emerging wearable devices would benefit from integrating ductile photovoltaic light-harvesting power sources. In this work, we report a small-molecule acceptor (SMA), also known as a non–fullerene acceptor (NFA), designed for stretchable organic solar cell (s-OSC) blends with large mechanical compliance and performance. Blends of the organosilane-functionalized SMA BTP-Si4 with the polymer donor PNTB6-Cl achieved a power conversion efficiency (PCE) of >16% and ultimate strain (ε_u) of >95%. Typical SMAs suppress OSC blend ductility, but the addition of BTP-Si4 enhances it. Although BTP-Si4 is less crystalline than other SMAs, it retains considerable electron mobility and is highly miscible with PNTB6-Cl and is essential for enhancing ε_u. Thus,s-OSCs with PCE > 14% and operating normally under various deformations (>80% PCE retention under an 80% strain) were demonstrated. Analysis of several SMA-polymer blends revealed general molecular structure–miscibility–stretchability relationships for designing ductile blends. 

In this paper, in situ high-resolution electron backscattered diffraction (EBSD) is combined with concurrent atomistic-continuum (CAC) simulations to study the interactions between dislocation-mediated slip and grain boundaries (GBs) in Ni. It is found that the local stress associated with slip-GB intersections first increases upon the pileup of dislocations, then remains high even after the nucleation of dislocations in the neighboring grain, only relaxing after the nucleated dislocations propagate away from the GB due to more incoming dislocations participating in the pileup. The local stress relaxation is accompanied by an atomic-scale GB structure reconfiguration, which affects not only the subsequent dislocation transmission, but also the configuration of those dislocations away from the GB. These findings demonstrate the importance of incorporating local stress history at higher length scale models, such as crystal plasticity finite element. 

Abstract Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO₂and ZrO₂) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO₂gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO₂and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions. 

Abstract Antiferroelectric materials, where the transition between antipolar and polar phase is controlled by external electric fields, offer exceptional energy storage capacity with high efficiencies, giant electrocaloric effect, and superb electromechanical response. PbZrO₃is the first discovered and the archetypal antiferroelectric material. Nonetheless, substantial challenges in processing phase pure PbZrO₃have limited studies of the undoped composition, hindering understanding of the phase transitions in this material or unraveling the controversial origins of a low‐field ferroelectric phase observed in lead zirconate thin films. Leveraging highly oriented PbZrO₃thin films, a room‐temperature ferrielectric phase is observed in the absence of external electric fields, with modulations of amplitude and direction of the spontaneous polarization and large anisotropy for critical electric fields required for phase transition. The ferrielectric state observations are qualitatively consistent with theoretical predictions, and correlate with very high dielectric tunability, and ultrahigh strains (up to 1.1%). This work suggests a need for re‐evaluation of the fundamental science of antiferroelectricity in this archetypal material.